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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3388 DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500V(Min) *High Switching Speed APPLICATIONS *Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage w w scs .i w VALUE 1200 V 500 V 6 V 5 A 10 A 50 W UNIT .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3388 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 v VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain w w w. IC= 0.1A; VCE= 5V IC= 3A; VCE= 5V sem isc .cn i 15 8 0.1 mA 0.1 mA isc Websitewww.iscsemi.cn 2 |
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